Laser-induced Fluorescence and Dispersed Fluorescence Spectroscopy of NiB: Identification of a New 2II State in 19000-22100 cm-1 |
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Affiliation: | Hefei National Laboratory for Physical Sciences at the Microscale and Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China |
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Abstract: | The laser-induced fluorescence excitation spectra of jet-cooled NiB radicals have been recorded in the energy range of 19000-22100 cm-1. Eleven bands have been assigned to the [20.77]2II-X2∑+ transition system for the first time. The dispersed fluorescence spectra related to most of these bands have been investigated. Vibrationally excited levels of the ground electronic state, with v" up to 6, have been observed. In addition, the lifetimes for almost all the observed bands have also been measured. |
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Keywords: | NiB Laser-induced fluorescence Dispersed fluorescence Direct current dis-charge |
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