GaN薄膜的溶胶-凝胶法制备及其表征

采用溶胶凝胶法成功地制备出氮化镓薄膜.以单质镓为镓源制备镓盐溶液、柠檬酸为络合剂制备出前驱体溶胶，再甩胶于Si(111) 衬底上，在氨气氛下热处理制备出GaN薄膜.X射线衍射（XRD）分析及选区衍射分析（SAED）表明所制备的薄膜是六角纤锌矿结构GaN薄膜；XPS分析其表面，结果显示样品中的镓元素、氮元素均以化合态存在，且Ga：N约为1：1；PL谱分析结果表明所制备的薄膜具有优良的发光性能.

Characteristic Analysis and Preparation of GaN Film by Sol-gel Method

Thin GaN films were successfully deposited on Si(111) substrates by the Sol-gel technique,which is simple and cost-effective in the preparation of epitaxial films.The precursor sol was prepared when Gallium metal was used as Ga source and citric acid as complexing agent.The as-prepared films were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction and selected diffraction.X-ray photoelectron energy spectroscopy in the surface of the films proves that Gallium and Nitrogen element...