Characterization of InxGa1−xAs crystals by 14 MeV neutron activation analysis

Indium doped GaAs crystals are analyzed quantitatively for indium by non-destructive 14 MeV neutron activation analysis. Experimental conditions are optimized to provide a precision of ±5% and a practical sensitivity of 50 ppm, by weight. The accuracy of the neutron activation method is established by comparison with the results obtained by atomic absorption and Rutherford back-scattering techniques. The method has been applied for determining the homogeneity of indium distribution of wafers by sectional analysis and is demonstrated as a reference method for calibrating the low temperature photoluminescence technique.