Ferroelectric characteristics of silicate-bound Bi4Ti3O12 thin films |
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| Authors: | K Kato K Suzuki K Tanaka D Fu K Nishizawa T Miki H Ishiwara |
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| Institution: | (1) National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan;(2) Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan |
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| Abstract: | 40-nm-thick Bi4Ti3O12 films have been deposited by spin coating with a hybrid precursor solution of bismuth-2-ethylhexanoate, titanium tetraisopropoxide and tetraethysilicate. The 500 °C-annealed thin film consists of Bi4Ti3O12 grains bound by ultra-thin amorphous silicate layers. The film shows a high degree of crystallinity with random orientation and exhibits a structure-dependent propeller-like P–V hysteresis loop. The ultra-thin layer of amorphous silicate is found to have multiple functions of binder, compositional buffer and insulator, which results in an improvement of the electrical properties of the Bi4Ti3O12-Bi2O3×SiO2 thin films. PACS 77.84.-s; 68.37.-d; 81.15.-z |
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