Replacing AgTSSCH2‐R with AgTSO2C‐R in EGaIn‐Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport |
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| Authors: | Dr Kung‐Ching Liao Dr Hyo Jae Yoon Dr Carleen M Bowers Dr Felice C Simeone Prof?Dr George M Whitesides |
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| Institution: | 1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138 (USA);2. Wyss Institute for Biologically Inspired Engineering, Harvard University, 60 Oxford Street, Cambridge, MA 02138 (USA);3. Kavli Institute for Bionano Science & Technology, Harvard University, 29 Oxford Street, Cambridge, MA 02138 (USA) |
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| Abstract: | This paper compares rates of charge transport by tunneling across junctions with the structures AgTSX(CH2)2nCH3 //Ga2O3 /EGaIn (n=1–8 and X= ? SCH2? and ? O2C? ); here AgTS is template‐stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (β, Å?1) and the injection current (J0, A cm?2) of the junctions comprising SAMs of n‐alkanethiolates and n‐alkanoates. Replacing AgTSSCH2‐R with AgTSO2C‐R (R=alkyl chains) had no significant influence on J0 (ca. 3×103 A cm?2) or β (0.75–0.79 Å?1)—an indication that such changes (both structural and electronic) in the AgTSXR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n‐alkanoates showed, as expected, that β for aliphatic (0.79 Å?1) and aromatic (0.60 Å?1) SAMs differed significantly. |
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| Keywords: | alkanoates charge transport EGaIn junction molecular electronics self‐assembled monolayer tunneling |
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