Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization |
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Authors: | Aaron Zhu Yossi Shacham-Diamand Mark Teo |
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Institution: | a Advanced Materials and Engineering Processing Laboratory (AMPEL), University of British Columbia, 2355 East Mall, Vancouver, British Columbia, Canada V6T 1Z4 b School of EE, Tel-Aviv University, Ramat-Aviv, 69978, Israel c School of Applied Chemistry, Waseda University, Shijuku-ku, Toyko 169-8555, Japan |
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Abstract: | The formation mechanism of electroless deposited Co(W,P) films is investigated. Co(W,P) films, containing 88-90 at% of Co and 10-12 at% of W and P, are deposited directly onto p-type Si(100) substrate via Pd wet activation. Co(W,P) initially nucleates around Pd activation sites and this is followed by a strong lateral growth. Uniform Co(W,P) thin films can be obtained after 2 min deposition. Fast immersion measurement shows that the mixed potential of Co(W,P) is −0.78 V versus Ag/AgCl electrode. XRD examination shows that the Pd layer has a domination of (111) texture and the principle microstructure of the as-deposited Co(W,P) film is the hcp phase of nano-sized ε-Co. The inelastic mean free path of diffused Cu in Co(W,P) is determined to be 7.37 Å which is significantly smaller than that (9.9 Å) in pure Co, indicating that Co(W,P) is a very effective barrier layer. |
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Keywords: | Scanning tunneling microscopy (STM) Thin films Co(W P) Deposition Crystal growth |
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