Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl6Si2Te6 in comparison to Tl6Ge2Te6

The title compounds were prepared from the elements in the stoichiometric ratio at 800 °C under exclusion of air. Tl₆Si₂Te₆ crystallizes in the space group P1¯, isostructural with Tl₆Ge₂Te₆, with , , , α=89.158(2)°, β=96.544(2)°, γ=100.685(2)°, (Z=2). Its structure is composed of dimeric [Si₂Te₆]⁶⁻ units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9 eV for Tl₆Si₂Te₆ and 0.5 eV for Tl₆Ge₂Te₆. The Seebeck coefficients are +65 μV K⁻¹ in case of Tl₆Si₂Te₆ and +150 μV K⁻¹ in case of Tl₆Ge₂Te₆ at 300 K, and the electrical conductivities are 5.5 and 3 Ω⁻¹ cm⁻¹, respectively.