含POSS光刻胶材料研究进展

光致抗蚀剂又称光刻胶，是微电子加工过程中的关键材料。多面体低聚倍半硅氧烷（POSS）是一种具有规则的笼型结构的聚合物增强材料，由POSS改性的聚合物实现了有机-无机纳米杂化，POSS刚性结构的引入阻碍了聚合物分子的运动，可以显著提高聚合物的玻璃化转变温度（T_g），降低聚合物的介电常数，提高聚合物的力学性能，也提高了含POSS光致抗蚀剂的耐蚀刻性。基于这些优点，含POSS的光刻胶材料得到广泛关注。本文对含POSS光刻胶的研究进展作了简要介绍。

Research Progress of POSS-containing Photoresist Materials

Photoresists are the key materials for micro-pattern processing. Polyhedral oligomeric silsesquioxane (POSS) is a kind of reinforcement material for polymer with regular cage structure. The polymer modified by POSS realizes organic-inorganic nano-hybridization. The introduction of rigid structure of POSS hinders the movement of polymer molecules, and so significantly increases the glass transition temperature (T_g), reduces the dielectric constant and improves the mechanical properties of the polymers. The etch resistance of POSS-containing photoresists is also enhanced. Based on these advantages, POSS-containing photoresist materials have attracted extensive attention. The research progress on POSS-containing photoresists is briefly introduced.