Fluorinated compounds for advanced IC interconnect applications: a survey of chemistries and processes

The semiconductor industry is now in the early stages of an unprecedented change in materials set for the integrated circuit (IC) interconnect structure. The traditional layers of aluminum conductors and silicon dioxide dielectrics are being replaced by copper thin films and a variety of low k candidates, respectively. In many cases, fluorine confers desirable properties on either the precursors or the final films. At the same time, fluorine presents some potentially adverse effects, which have led to a so-called “fear-of-fluorine” in interconnect applications. This paper will review the proposed uses of fluorinated compounds in the interconnect structures, covering both precursors and the resulting thin films. Both the status of technical studies, and the prospects for commercial implementation, will be addressed.