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Enhanced temperature-independent magnetoresistance below the metal-insulator transition temperature of epitaxial La0.2Nd0.4Ca0.4MnO3 thin films
Authors:Darshan C Kundaliya  A A Tulapurkar  J John  R Pinto  R G Kulkarni
Affiliation:(1) Department of Physics, Saurashtra University, 360 005 Rajkot, India;(2) Tata Institute of Fundamental Research, Homi Bhabha Road, 400 005 Mumbai, India
Abstract:Epitaxial La0.2Nd0.4Ca0.4MnO3 thin films have been deposited at 800°C on LaAlO3 substrate using pulsed laser deposition technique. The structural and magnetotransport properties of the films have been studied. The sharp peak in the temperature dependence of the resistance corresponding to metal-to-insulator transition (T p) has been observed at a temperature of T p=82 K, 97 K and 110 K for 0 Oe, 20 kOe and 40 kOe magnetic fields, respectively. The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below T p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature T c=250 K. The ZFC temperature data of the film displays ferromagnetic behavior for higher temperature regime T c=250 K>T>T p=82 K, and a decrease in magnetization with decreasing temperature up to 5 K below 82 K exhibiting a sort of antiferromagnetic behavior in the low temperature regime (T<82 K=T p=T N).
Keywords:Thin films  magnetoresistance  magnetization
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