Transport phenomena analysis for boron CVD in a horizontal cold-wall reactor

The transport phenomena in a horizontal cold-walled semicircular reactor are analyzed for the CVD of boron from BCl₃ and H₂. The mixed problem of energy, momentum, and mass conservations is solved by a simple finite difference method. The concentration of the B-reactant on the deposition surface is substituted by the sum of equilibrium mole fractions of the B-containing gas species. The profiles of temperature, velocity, and reactant concentrations in the CVD reactor are illustrated, and the boron deposition rate profile along the substrate is predicted. The effect of the reactant input composition on the deposition rate is calculated, and compared with the experimental data.