首页 | 本学科首页   官方微博 | 高级检索  
     


Nanostructuring Germanium Nanowires by In Situ TEM Ion Irradiation
Authors:Osmane Camara  Anamul H. Mir  Krzysztof Dzieciol  Graeme Greaves  Shibabrata Basak  Hans Kungl  Matteo Bosi  Luca Seravalli  Steve E. Donnelly  Rüdiger A. Eichel  Jonathan A. Hinks
Affiliation:1. School of Computing and Engineering, University of Huddersfield, Queensgate, Huddersfield, HD1 3DH United Kingdom;2. Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research – Fundamental Electrochemistry (IEK-9), 52425 Jülich, Germany;3. IMEM-CNR, Parco Area delle Scienze 37a, Parma, 43124 Italy
Abstract:Once nanomaterials have been synthesized, inducing further structural modifications is challenging. However, being able to do so in a controlled manner is crucial. In this context, germanium nanowires are irradiated in situ within a transmission electron microscope (TEM) by a 300 keV xenon ion beam at temperatures ranging from room temperature (RT) to 500 °C. The ion irradiation is performed in situ and the evolution of nanowires during irradiation is monitored. At 300 °C and below, where the temperature is low enough to allow amorphization, the ion beam causes the formation of nanostructures within the nanowires. Formation of nanopores and swelling of nanowires is observed for a very low fluence of 2.2 × 1014 and up to 4.2 × 1015 ions cm−2. At higher fluences, the thickness of the nanowires decreases, the nanowires lose their wire-like cylindrical shape and the nanostructuring caused by the ion beam becomes more complex. The nanostructures are observed to be stable upon crystallization when the nanowires are annealed at 530 °C. Furthermore, in situ imaging allows the growth of nanopores during irradiation to be followed at RT and at 300 °C providing valuable insights into the mechanism responsible for the nanostructuring.
Keywords:germanium  in situ transmission electron microscopy  ion beam  nanopores  nanostructuring  nanowires  radiation damage
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号