Luminescence of ZnO Having a Superstoichiometric Content of Oxygen

Using a unique method of radical-beam heteroepitaxy (RBHE) based on annealing of the crystals of the II–VI (ZnSe) compounds in a flow of radicals of a metalloid component — oxygen O — ZnO layers with a superstoichiometric content of oxygen were obtained. The conductivity of the layers = 10² ·cm, the mobility of the holes = 23 cm²/V·sec, and the concentration N_A = 10¹⁵ cm^–3. The luminescence spectra of pure ZnO single crystals and those doped with Li and Na, both treated by the RBHE method, are studied at helium temperatures. The luminescence centers associated with the intrinsic defects (V_Zn) are identified.