1.Physical-Technical Institute, Ural Branch,Russian Academy of Sciences,Izhevsk,Russia;2.Udmurt State University,Izhevsk,Russia;3.Boreskov Institute of Catalysis, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:
The local atomic structure and surface morphology of thin semiconductor films of Ge have been studied via extended X-ray absorption
fine structure spectroscopy and atomic force microscopy. The films have been obtained by thermal evaporation of a material
in an ultrahigh vacuum at different substrate temperatures. The films contain both amorphous and nanocrystalline phases. The
percentage of the phases depends on the condensation temperature. The classical linear dependence of grain sizes on condensation
temperature T is violated at T=100°C.