Schottky contacts in germanium nanowire network devices synthesized from nickel seeds |
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| Affiliation: | 1. Departamento de Física – Nano Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 - SP 310, São Carlos, CEP 13565-905, Brasil;2. Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP14169-263, Brasil;3. Departamento de Física – Laboratório Raman, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 - SP 310, São Carlos, CEP 13565-905, Brasil;4. Departamento de Química - LIEC, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 - SP 310, São Carlos, CEP 13565-905, Brasil;1. Laboratoire des Matériaux Composites, Polymères et Céramiques, FSS 3018, Université de Sfax, Tunisia;2. Laboratoire de Génie Textile, Université de Monastir, ISET Ksar Hellal, Tunisia;3. College of Engineering, Industrial Engineering Department, Taiba University, Saudi Arabia;4. Laboratoire IMMM, Université du Maine, Le Mans, France;1. Department of Optics and Spectroscopy, Voronezh State University, Voronezh 394006, Russia;2. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus;3. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia;1. Electrical Engineering Department, Federal University of Paraná (UFPR), Brazil;2. Electrical Engineering Department, Federal Institute of Technological Education of Maranhão (IFMA), Brazil |
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| Abstract: | This paper presents reliable process to the synthesis of germanium nanowires by the vapor–liquid–solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devices indicated the presence of Schottky barriers, whose values depend linearly on temperature. This linear dependence was assigned to the tunneling process through an insulator layer (mostly GeOx) at the metal-semiconductor interface. These results point to the existence of another channel for electrons transference from metal to semiconductor being very significant to electronic devices fabrication. |
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| Keywords: | Nanostructure Semiconductor Raman spectroscopy Schottky contact |
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