Optoelectronic properties of Ni–GaP diodes with a modified surface |
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| Institution: | 1. Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua, Mexico;2. Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro, Mexico;3. Chernivtsi National University, Kotsyubynsky Str. 2, 58012 Chernivtsi, Ukraine;1. Key Laboratory of Advanced Civil Engineering Materials (Tongji University), Ministry of Education, Shanghai 201804, China;2. School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;1. Department of Physics, College of Agriculture and Natural Sciences, U.C.C, Ghana;2. Department of Mathematics, College of Agriculture and Natural Sciences, U.C.C, Ghana;1. AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków, Poland;2. AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, al. Mickiewicza 30, Kraków, Poland;1. College of Physics and Information Technology, Shaanxi Normal University, Xian 710119, Shaanxi, PR China;2. State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China |
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| Abstract: | We report the promising results for Ni–GaP Schottky diode structures manufactured on the substrates with chemically-etched nano-scale surface formations that are responsible for a clearly marked luminescence band located at the energy exceeding the band gap of the bulk GaP. The other peculiarity produced by surface patterning concerns a remarkable redshift of material's optical absorption edge. At the room temperature, the height of potential barrier for Ni–GaP structure is 1.8 eV, with the monochromatic sensitivity peaking at 0.35 A/W. The comparative study of diode performance under different light sources exhibited the pronounced linear photocurrent-illumination dependence for about five orders of illumination magnitude, evidencing good optical and electrical quality of Ni–GaP diodes with surface-modified semiconductor substrate. |
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| Keywords: | Schottky diode Surface nano-scale formations Enhanced photosensitivity |
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