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Multi-layer graphene membrane based memory cell
Affiliation:1. Physics Department, Belarusian State University, pr. Nezavisimosti 4, Minsk 220030, Belarus;2. Institute for Spectroscopy Russian Academy of Science, Fizicheskaya Str. 5, Troitsk, 142190 Moscow, Russia;3. Moscow Institute of Physics and Technology, Institutskii pereulok 9, Dolgoprudny, 141700 Moscow region, Russia;1. Institute of Super Microstructure and Ultrafast Process in Advanced Materials, College of Physics and Electronics, Central South University, 605 South Lushan Road, Changsha 410012, PR China;2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410012, PR China;3. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14534, USA;1. Department of Optics and Spectroscopy, Voronezh State University, Voronezh 394006, Russia;2. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus;3. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia;1. Laboratoire des Matériaux Composites, Polymères et Céramiques, FSS 3018, Université de Sfax, Tunisia;2. Laboratoire de Génie Textile, Université de Monastir, ISET Ksar Hellal, Tunisia;3. College of Engineering, Industrial Engineering Department, Taiba University, Saudi Arabia;4. Laboratoire IMMM, Université du Maine, Le Mans, France;1. Al Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Science, Department of Physics, Riyadh, Saudi Arabia;2. The Abdus Salam International Centre for Theoretical Physics, Strada Costiera 11, Miramare-Trieste, Italy;3. Mathematics Department, Faculty of Science, Sohag University, Sohag, Egypt
Abstract:The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.
Keywords:Multi-layer graphene  Van der Waals interaction  Elecromechanics  Membrane bending  Memory cell
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