Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors |
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| Authors: | Salvador Dueñas Helena Castán Héctor García Alfonso Gómez Luis Bailón Kaupo Kukli Jaakko Niinistö Mikko Ritala Markku Leskelä |
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| Institution: | 1. Dept. Electrónica, Universidad de Valladolid, ETSI Telecomunicación, Campus “Miguel Delibes” s/n, 47011 Valladolid, Spain;2. Dept. Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland;1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;2. School of Materials Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;1. University of Patras, Department of Physics, 26504 Rion-Patras, Greece;2. NCSR “Demokritos”, Inst. of Advanced Materials, Physicochemical Processes, Nanotechnology & Microsystems, GR 15310 Aghia Paraskevi, Athens, Greece;3. Surface Science Laboratory, Department of Chemical Engineering, University of Patras, 26504 Patras, Greece;1. Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 01811, South Korea;2. Convergence Institute of Biomedical Engineering & Biomaterials, Seoul National University of Science and Technology (Seoultech), Seoul 01811, South Korea;3. Department of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, South Korea;1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria;2. Fraunhofer-Center Nanoelectronic Technology, Koenigsbruecker Strasse 180, Dresden 01099, Germany;3. Fraunhofer-Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany;4. Chair of Electron Devices, University Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany |
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| Abstract: | Electrical characterization of zirconium oxide (ZrO2) based metal-oxide-semiconductor (MOS) structures has been carried out. ZrO2 films have been atomic layer deposited (ALD) by using novel cyclopentadienyl-based precursors, which have recently revealed themselves as very adequate in terms of thermal stability and high permittivity of the dielectrics deposited. Our results demonstrate good quality of the films, especially when mixed alkylamido-cyclopentadienyl precursors are used on SiO2/Si substrates. Conduction mechanisms in these MIS capacitors were studied, with moderately or highly-doped silicon used as substrate. |
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