| 边缘击穿抑制对InGaAs/InP盖革模式APD性能的影响 |
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| 引用本文： | 迟殿鑫,高新江,姚科明,陈伟,张承.边缘击穿抑制对InGaAs/InP盖革模式APD性能的影响[J].半导体光电,2015,36(3):361-364,399. |
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| 作者姓名： | 迟殿鑫 高新江 姚科明 陈伟 张承 |
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| 作者单位： | 重庆光电技术研究所,重庆,400060;重庆光电技术研究所,重庆,400060;重庆光电技术研究所,重庆,400060;重庆光电技术研究所,重庆,400060;重庆光电技术研究所,重庆,400060 |
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| 摘 要： | 基于吸收区倍增区分置(SAM)结构研制了一种用于单光子探测的平面型InGaAs/InP盖革模式雪崩光电二极管(APD).着重讨论了边缘击穿抑制效果对器件暗计数率、单光子探测效率,以及后脉冲概率等主要盖革模式性能参数的影响,并对其原因进行了探讨与分析.研究结果表明,有效抑制边缘击穿是获得高性能InGaAs/InP平面型盖革模式雪崩光电二极管的关键因素之一,受边缘击穿抑制效果影响,探测效率随过偏压增速缓慢,而当过偏压达到一定值时,暗计数率与后脉冲概率成倍增加.
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| 关 键 词： | 盖革模式 SAM 边缘击穿抑制 暗计数率 探测效率 后脉冲概率 过偏压 |
| 收稿时间： | 2014/10/4 0:00:00 |
Effect of Edge Breakdown Suppression on the Performance of InGaAs/InP Geiger Mode APD |
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| Abstract: | The planar Geiger mode InGaAs/InP avalanche photodiodes for single photon detection was fabricated based on the structure of Separated Abortion and Multiplication(SAM).The effects of edge breakdown suppression on main factors of Geiger mode such as dark count rate,single photon detection efficiency and afterpulsing probability were analyzed,and also the theoretical reasons were discussed.The results show that effective edge breakdown suppression is one of the main factors for obtaining high performance planar Geiger mode InGaAs/InP avalanche photodiodes.With the overbias increasing,the detection efficiency increases slower,and when the overbias exceeds the threshold,the DCR and AP will present fold increase. |
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| Keywords: | Geiger mode SAM edge breakdown suppression dark count rate single photon detection efficiency afterpulsing overbias |
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