Self-assembled quantum dot semiconductor nanostructure modeling

The calculation of the electronic structure of a vertical multifold stack of self-assembled InAs/GaAs lens-shaped quantum dots is presented. The developed numerical method is based on a rigorous Hamiltonian formulation of an eight-band k.p perturbation accounting for the carrier kinetics and lattice-mismatch strain endured by the islands. The considered implementation is built upon a custom partition of the unit cell. The accompanying validation analysis—consisting of a comprehensive hierarchy of convergence criteria, qualitative, and quantitative test cases—unequivocally shows that the obtained results adhere to the prescribed zero dimensional physics.