Self-assembled quantum dot semiconductor nanostructure modeling |
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Authors: | A Benhsaien T J Hall |
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Institution: | (1) Photonic Network Technology Laboratory, Center for Research in Photonics, School of Information Technology and Engineering, University of Ottawa, 800 King Edward Ave., Ottawa, ON, K1N 6N5, Canada |
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Abstract: | The calculation of the electronic structure of a vertical multifold stack of self-assembled InAs/GaAs lens-shaped quantum
dots is presented. The developed numerical method is based on a rigorous Hamiltonian formulation of an eight-band k.p perturbation accounting for the carrier kinetics and lattice-mismatch strain endured by the islands. The considered implementation
is built upon a custom partition of the unit cell. The accompanying validation analysis—consisting of a comprehensive hierarchy
of convergence criteria, qualitative, and quantitative test cases—unequivocally shows that the obtained results adhere to
the prescribed zero dimensional physics. |
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Keywords: | Quantum dot k p Semiconductor Optoelectronic |
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