Adsorption-induced Fermi level pinning |
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Authors: | S Yu Davydov S V Troshin |
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Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Saint Petersburg State Electrotechnical University (LéTI), ul. Professora Popova 5, St. Petersburg, 197376, Russia |
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Abstract: | The adsorption-induced Fermi level pinning is shown to occur at the coverages Θ* corresponding to a shallow extremum or saturation of the work function of the system. Equations for Θ* are derived within a modified Anderson-Newns adsorption model. Experimental data on the adsorption of atoms of alkali, alkaline-earth (Ba), and rare-earth metals and hydrogen on semiconductors (silicon, gallium arsenide, and titanium dioxide) are analyzed. The position of the Fermi level on the surface of a semiconductor is estimated. |
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