Nanotube devices: A microscopic model |
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Authors: | K A Bulashevich S V Rotkin |
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Institution: | (1) St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia;(2) Beckman Institute, UIUC, Urbana, IL 61801, USA;(3) Ioffe Institute, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia |
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Abstract: | A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices. |
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