Transport studies in boron-ion implanted type IIa diamond

We have investigated low-temperature electrical transport mechanisms in the surface layer of a type IIa diamond which has been heavily implanted with boron-ions at low temperatures and then annealed at high temperatures. The boron atoms occupy substitutional sites giving rise to a heavily doped wide-bandgap semiconductor. The dc-conductivity results suggest that for the maximum boron doping that has been achieved, the diamond sample is close to the insulator-metal transition. A model to account for the observed increase in activated boron centres with ion dose is presented. On the insulating side of the transition, the data are interpreted in terms of variable-range hopping laws.