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Percolative transition in carbon-ion implanted type IIa diamond
Authors:Tshakane Tshepe  Johan F. Prins  Michael J. R. Hoch
Affiliation:1.Department of Physics and Condensed Matter Physics Research Unit,University of the Witwatersrand,South Africa;2.Schonland Research Centre for Nuclear Sciences,University of the Witwatersrand,South Africa
Abstract:Experimental data for the conductivity of type IIa diamond specimens implanted at low temperatures with carbon ions, followed by high temperature annealing, have been analyzed using hopping and percolation theories in the vicinity of the insulator-metal transition. Near the transition it appears that conductivity occurs viasp 2-bonded graphitic clusters which are randomly distributed in thesp 3-bonded diamond matrix. A conductivity crossover between the Mott and Efros-Shklovskii VRH laws has been observed on the insulating side of the transition.
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