The structure of Mo/Si multilayers prepared in the conditions of ionic assistance |
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Authors: | EN Zubarev VV Kondratenko VA Sevryukova SA Yulin T Feigl N Kaiser |
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Institution: | (1) ‘Kharkiv Polytechnic Institute’, National Technical University, Frunze-Str. 21, 61002 Kharkiv, Ukraine;(2) Fraunhofer-Institut für Angewandte Optik und Feinmechanik, Albert-Einstein-Str. 7, 07745 Jena, Germany |
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Abstract: | The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has
been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by
modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface
roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards
the surface of a Mo/Si multilayer composition. A negative bias potential (up to -200 V) applied to a substrate during silicon
layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over
-200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising
the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing
interlayer thicknesses were found.
PACS 61.10.Kw; 68.37.-d; 68.65.Ac |
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Keywords: | |
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