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Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy
Authors:Ou Gu-Ping  Song Zhen  Wu You-Yu  Chen Xiao-Qiang  Zhang Fu-Jia
Affiliation:School of Physical Science and Technology, Lanzhou University,Lanzhou 730000, China; School of Physics, Hunan University of Science and Technology,Xiangtan 411201, China; School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China
Abstract:Through the investigation of the sample surface and interface of 3, 4, 9,10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thinfilms using atomicforce microscopy, it has been found that the surface is complanate, thegrowth is uniform and thedefects cover basically the surface of ITO. Furthermore, the number ofpinholes is small. Theanalysis of the sample surface and interface further verifies this result byusing x-rayphotoemission spectroscopy . At the same time, PTCDA is found to have the ability of restrainingthe diffusion of chemical constituents from ITO to the hole transport layer,which is beneficial tothe improvement of the performance and the useful lifetime of the organiclight emittingdiodes (OLEDs).
Keywords:atomic force microscopy   x-ray photoemissionspectroscopy   PTCDA/ITO
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