Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy |
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Authors: | Ou Gu-Ping Song Zhen Wu You-Yu Chen Xiao-Qiang and Zhang Fu-Jia |
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Institution: | School of Physical Science and Technology, Lanzhou University,Lanzhou 730000, China; School of Physics, Hunan University of Science and Technology,Xiangtan 411201, China; School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China |
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Abstract: | Through the investigation of the sample surface and interface of 3, 4, 9,
10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin
films using atomic
force microscopy, it has been found that the surface is complanate, the
growth is uniform and the
defects cover basically the surface of ITO. Furthermore, the number of
pinholes is small. The
analysis of the sample surface and interface further verifies this result by
using x-ray
photoemission spectroscopy . At the same time, PTCDA is found to have the
ability of restraining
the diffusion of chemical constituents from ITO to the hole transport layer,
which is beneficial to
the improvement of the performance and the useful lifetime of the organic
light emitting
diodes (OLEDs). |
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Keywords: | atomic force microscopy x-ray photoemission
spectroscopy PTCDA/ITO |
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