Hydrogenated amorphous carbon thin films deposited by plasma-assisted chemical vapor deposition enhanced by electrostatic confinement: structure,properties, and modeling |
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Authors: | S M M Dufrène F Cemin M R F Soares C Aguzzoli M E H Maia da Costa I J R Baumvol C A Figueroa |
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Institution: | 1. CCET, Universidade de Caxias do Sul, Caxias do Sul, RS, Brazil 4. école Européene d’Ingénieurs en Génie des Matériaux, Université de Lorraine, Nancy, France 3. Departamento de Física, PUC-Rio, Rio de Janeiro, RJ, Brazil 2. IF, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, Brazil 5. Plasmar Tecnologia Ltda, Caxias do Sul, RS, Brazil
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Abstract: | Hydrogenated amorphous carbon (a-C:H) is a state-of-the-art material with established properties such as high mechanical resistance, low friction, and chemical inertness. In this work, a-C:H thin films were deposited by plasma-assisted chemical vapor deposition. The deposition process was enhanced by electrostatic confinement that leads to decrease the working pressure achieving relative high deposition rates. The a-C:H thin films were characterized by elastic recoil detection analysis, Rutherford backscattering spectroscopy, scanning electron microscopy, Raman spectroscopy, and nanoindentation measurements. The hydrogen content and hardness of a-C:H thin films vary from 30 to 45 at% and from 5 to 15 GPa, respectively. The hardness of a-C:H thin films shows a maximum as a function of the working pressure and is linearly increased with the shifting of the G-peak position and I D/I G ratio. The structure of a-C:H thin films suffers a clustering process at low working pressures. A physical model is proposed to estimate the mean ion energy of carbonaceous species arriving at the surface of a-C:H thin films as a function of processing parameters as pressure and voltage and by considering fundamentals scattering events between ion species and neutral molecules and atoms. |
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