Specular X-ray reflectivity study of interfacial SiO2 layer in thermally annealed NiO/Si assembly |
| |
Authors: | Subarna Mitra Suvankar Chakraborty Krishnakumar S R Menon |
| |
Institution: | 1. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata, 700064, India
|
| |
Abstract: | Present report details an analysis of X-ray reflectivity (XRR) for solution processed NiO thin films on Si (100) substrates. The films were annealed at 700–1,000 °C for 1 h in air. XRR data indicated growth of SiO2 layer from ~8 nm at 700 °C to ~66 nm at 1,000 °C along with significant variation of electron density profile. X-ray photoelectron spectroscopy and X-ray diffraction studies were used as supporting studies for phase purity and oxidation states of the NiO thin films as well as interfacial SiO2 layer. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|