A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission |
| |
Authors: | Lü Xue-Qin Jin Peng and Wang Zhan-Guo |
| |
Institution: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
Abstract: | A broadband external cavity tunable laser is realized by
using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain
device. A tuning range of 69~nm with a central wavelength of 1056
nm, is achieved at a bias of 1.25~kA/cm^2 only by utilizing the
light emission from the ground state of QDs. This large tunable
range only covers the QD ground-state emission and is related to the
inhomogeneous size distribution of QDs. No excited state contributes
to the tuning bandwidth. The application of the QD gain device to the
external cavity tunable laser shows its immense potential in
broadening the tuning bandwidth. By the external cavity feedback,
the threshold current density can be reduced remarkably compared
with the free-running QD gain device. |
| |
Keywords: | quantum-dot tunable laser external cavity broadband tuning |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |