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Spatial distribution of impurities in delta-doped n-type GaAs |
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| Authors: | B Ullrich E F Schubert J B Stark J E Cunningham |
| Institution: | (1) Max-Planck-Institute for Solid State Research, D-7000 Stuttgart, Germany;(2) AT&T Bell Laboratories, 07974 Murray Hill, NJ, USA;(3) Massachusetts Institute of Technology, 02139 Cambridge, MA, USA;(4) AT&T Bell Laboratories, 07733-1988 Holmdel, NJ, USA |
| Abstract: | Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented. |
| Keywords: | 81 10 73 60 75 30 |
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