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Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar |
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| Authors: | T. Sato T. Yamaguchi W. Izumida S. Tarucha H. Z. Song T. Miyazawa Y. Nakata T. Ohshima N. Yokoyama |
| Affiliation: | a ERATO/JST, NTT Atsugi Research & Development Center, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;b University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan;c Fujitsu Laboratories Limited, Atsugi-shi, Kanagawa 243-0197, Japan |
| Abstract: | By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of 30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD. |
| Keywords: | Author Keywords: Single-electron transport Self-assembled InAs dot Quantum dot Fock– Darwin state |
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