| 超薄基区SiGe HBT基区渡越时间能量传输模型 |
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| 引用本文： | 蔡瑞仁,李垚,刘嵘侃. 超薄基区SiGe HBT基区渡越时间能量传输模型[J]. 微电子学, 2006, 36(5): 618-621 |
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| 作者姓名： | 蔡瑞仁 李垚 刘嵘侃 |
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| 作者单位： | 1. 中国科学技术大学,物理系,微电子实验室,安徽,合肥,230026
2. 模拟集成电路国家重点实验室,中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 通过求解玻尔兹曼能量平衡方程，得出基区的电子温度分布，建立了考虑电子温度变化，适用于超薄基区SiGeHBT的基区渡越时间模型。该模型考虑了电子温度对迁移率的影响，基区重掺杂和Ge引起的禁带变窄效应及速度饱和效应。比较了用能量传模型与漂移扩散模型计算的截止频率，利用器件模拟软件ATLAS进行了模拟，结果与能量传输模型计算结果吻合。
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| 关 键 词： | 锗硅异质结双极晶体管 超薄基区 能量传输模型 基区渡越时间 速度饱和效应 |
| 文章编号： | 1004-3365（2006）05-0618-04 |
| 收稿时间： | 2006-04-19 |
| 修稿时间： | 2006-04-192006-07-12 |
Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT''''s |
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| CAI Rui-ren,LI Yao,LIU Rong-kan. Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT''''s[J]. Microelectronics, 2006, 36(5): 618-621 |
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| Authors: | CAI Rui-ren LI Yao LIU Rong-kan |
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| Affiliation: | 1. Microelectronics Laboratory, Dept. of Physics, Univ. of Sci. and Technol. of China, Hefei, Anhui, 230026, P.R. China 2. National Laboratory of Analog Integrated Circuits;Sichuan Institute of Solid State Circuits, CETC, Chongqing, 400060, P.R. China |
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| Abstract: | By solving Boltzmann energy transport equation,the electron temperature distribution in the base region was obtained,and a model for base transit time of ultra-thin base SiGe HBT's was developed with electron temperature distribution taken into consideration.This model takes into account the effect of electron temperature on mobility,bandgap narrowing due to heavy doping in base region and the Ge concentration,and carrier velocity saturation in the BC junction. Comparisons were made on cut-off frequencies between predictions of this model and simulation results from the drift diffusion model to demonstrate the utility and accuracy of the model. |
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| Keywords: | SiGe HBT Ultrathin base Energy transport model Base transit time Velocity saturation effect |
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