Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO₂ interface roughness on the oxide film quality has been studied.