| Ni/Pd/Si固相反应及NiSi热稳定性增强研究 |
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| 引用本文： | 屈新萍,茹国平,李炳宗,C.Detavernier,R.Van Meirhaeghe.Ni/Pd/Si固相反应及NiSi热稳定性增强研究[J].半导体学报,2002,23(11):1173-1177. |
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| 作者姓名： | 屈新萍 茹国平 李炳宗 C.Detavernier R.Van Meirhaeghe |
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| 作者单位： | 1. 复旦大学微电子学系,ASIC和系统国家重点实验室,上海,200433;2. Departement of Solid State Science,Gent University,B-9000 Belgium |
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| 基金项目： | 国家自然科学基金;60106002; |
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| 摘 要： | 研究了Ni/Pd双层薄膜在硅衬底上的硅化物形成过程.结果表明,加入Pd层后,退火形成Ni1-xPdxSi固熔体,该固熔体比NiSi的热稳定性好,使得NiSi向NiSi2的转变温度升高.加入Pd的量越多,NiSi2的成核温度越高,并用经典成核理论解释了该现象.
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| 关 键 词： | NiSi 成核 固熔体 热稳定性 |
| 文章编号： | 0253-4177(2002)11-1173-05 |
| 修稿时间： | 2002年2月11日 |
Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study |
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| Qu Xinping ,Ru Guoping ,Li Bingzong ,C Detavernier and R Van Meirhaeghe.Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study[J].Chinese Journal of Semiconductors,2002,23(11):1173-1177. |
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| Authors: | Qu Xinping Ru Guoping Li Bingzong C Detavernier and R Van Meirhaeghe |
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| Institution: | Qu Xinping 1,Ru Guoping 1,Li Bingzong 1,C Detavernier 2 and R Van Meirhaeghe 2 |
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| Abstract: | The silicide formation for Ni/Pd bilayers on Si substrate is investigated.The results show that,when adding Pd into Ni/Si,thermal annealing leads to formation of a solid solution Ni 1-x Pd x Si layer with better thermal stability than NiSi.The nucleation temperature for NiSi 2 is retarded due to the Pd addition.The more Pd added,the higher the NiSi 2 nucleation temperature is.In the mean time,the nucleation for PdSi is promoted due to Ni addition.The enhancing of NiSi thermal stability is well explained by classic nucleation theory. |
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| Keywords: | NiSi nucleation solid solution thermal stability |
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