| 对称薄膜双栅MOSFET温度特性的研究 |
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| 引用本文： | 谌婧娇,陈军宁,高珊.对称薄膜双栅MOSFET温度特性的研究[J].合肥工业大学学报(自然科学版),2012,35(6):776-779. |
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| 作者姓名： | 谌婧娇 陈军宁 高珊 |
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| 作者单位： | 安徽大学电子信息工程学院,安徽合肥,230601 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 文章对薄膜双栅MOSFET器件的温度特性进行了研究。首先对其进行理论分析,得到亚阈值电流、阈值电压和饱和电流等随温度的变化关系,并计算出理论结果,再用Medici模拟仿真加以验证,比较了不同温度下的输出特性、饱和漏电流、阈值电压与温度变化的关系,验证结果表明两者是一致的。
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| 关 键 词： | 薄膜双栅MOSFET 温度 阈值电压 亚阈值电流 |
Temperature characteristics of symmetric thin-film double-gate MOSFET |
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| CHEN Jing-jiao
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CHEN Jun-ning
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GAO Shan.Temperature characteristics of symmetric thin-film double-gate MOSFET[J].Journal of Hefei University of Technology(Natural Science),2012,35(6):776-779. |
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| Authors: | CHEN Jing-jiao CHEN Jun-ning GAO Shan |
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| Institution: | (School of Electronics and Information Engineering,Anhui University,Hefei 230601,China) |
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| Abstract: | The temperature characteristics of thin-film double-gate MOSFET are studied in this paper.Firstly,the change of the subthreshold current,threshold voltage and saturation current with the temperature is calculated theoretically.Then by using Medici model,the separate differences of output specification,saturation drain current and threshold voltage under different temperatures are analyzed.It is shown that the theoretical results are in accordance with the simulation ones. |
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| Keywords: | thin-film double-gate MOSFET temperature threshold voltage subthreshold current |
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