Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure |
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Authors: | K. Gnanasekar K. Navaneethakrishnan |
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Affiliation: | (1) The American College, Madurai, 625002, India;(2) School of Physics, Madurai-Kamaraj University, Madurai, 625021, India |
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Abstract: | Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields. |
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Keywords: | 85.75.Mm Spin polarized resonant tunnel junctions 72.20.-i Conductivity phenomena in semiconductors and insulators 73.40.Gk Tunneling 73.63.Hs Quantum wells |
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