| C波段单片有源环行器 |
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| 引用本文： | 岑元飞,林金庭.C波段单片有源环行器[J].固体电子学研究与进展,1996,16(1):5-8. |
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| 作者姓名： | 岑元飞 林金庭 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 报道了一种源耦合反馈单片有源环行器的研究结果、该单片电路采用实测ＦＥＴ的Ｓ参数进行微波ＣＡＤ优化设计，内部包含有３个３００μｍ栅宽的ＦＥＴ，芯片面积１．７ｍｍ×１．９ｍｍ。采用ＧａＡｓ的离子注入平面工艺，芯片电路具有良好的均匀性、一致性。在３．５～４．５ＧＨｚ内，电路插入损耗约７．５ｄＢ，隔离度为２１～２６ｄＢ，驻波比基本小于２。
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| 关 键 词： | 微波单片集成电路，有源环行器，反馈 |
A C-Band Monolithic Active Circulator |
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| Cen Yuanfei,Lin Jinting,Chen Kejin.A C-Band Monolithic Active Circulator[J].Research & Progress of Solid State Electronics,1996,16(1):5-8. |
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| Authors: | Cen Yuanfei Lin Jinting Chen Kejin |
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| Abstract: | In this paper,experimental results of a source-couple-feedback monolithic active circulator are discussed.With practical measured S-parameters of FET,the MMIC circulator has been designed by microwave CAD technique.The ion-implant planar technology ensures good uniformity of the circulator performance.The circuit consists of 3 GaAs MESFETs of 300 μm gate periphery,and the chip size is 1.7 mm×1.9 mm.The MMIC circulator provides about 7.5 dB insertion loss,21～26 dB isolation and VSWR less than 2 in 3.5～4.5 GHz frequency range. |
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| Keywords: | MMIC Active Circulator Feedback |
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