Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field |
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Authors: | Padilha José Eduardo Pontes Renato Borges Fazzio Adalberto |
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Institution: | Instituto de Física, Universidade de S?o Paulo, S?o Paulo, SP, Brazil. padilha@if.usp.br |
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Abstract: | By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order. |
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