| 一种新型真空微电子压力传感器的研制 |
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| 引用本文： | 张正元,徐世六,温志渝,黄尚廉,张正.一种新型真空微电子压力传感器的研制[J].微电子学,2001,31(2):97-99,120. |
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| 作者姓名： | 张正元 徐世六 温志渝 黄尚廉 张正 |
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| 作者单位： | 1. 信息产业部电子第二十四研究所,
2. 重庆大学光电工程系, |
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| 摘 要： | 采用各向异性腐蚀与各向同性腐蚀相结合的技术和特殊的硅-硅键合技术，成功地研制出了一种新型真空微电子压力传感器。测试分析结果表明，该传感器反向击穿电压达到100V；在加3V正向电压时，其单个锥尖发射电流为0.2nA；在25-100g的压力范围内与输出电压呈线性关系，灵敏度为0.1μA/g。
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| 关 键 词： | 微电子传感器 真空压力传感器 各向异性腐蚀 |
| 文章编号： | 1004-3365(2001)02-0097-03 |
Development of a Novel Microelectronic Vacuum Pressure Sensor |
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| ZHANG Zheng-yuan,XU Shi-liu,WEN Zhi-yu,HUANG Shang-lian,ZHANG Zheng-fan.Development of a Novel Microelectronic Vacuum Pressure Sensor[J].Microelectronics,2001,31(2):97-99,120. |
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| Authors: | ZHANG Zheng-yuan XU Shi-liu WEN Zhi-yu HUANG Shang-lian ZHANG Zheng-fan |
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| Institution: | WT5BZ]ZHANG Zheng yuan 1,XU Shi liu 1,WEN Zhi yu 2,ZHANG Zheng fan 1,HUANG Shang lian 2 [WT6BX] |
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| Abstract: | A novel microelectronic vacuum pressure sensor is described, which is fabricated by using anisotropic etching combined with isotropic etching, as well as a special SDB technology. Results from measurement and analysis show that breakdown voltage of the sensor is 100 V, the emitting current of a single silicon-tip is 0. 2 nA at a forward voltage of 3 V, the pressure on the sensor is linear with the output voltage at the pressure range of 25 g～100 g, and the sensitivity of the sensor is 0. 1 μA/g. |
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| Keywords: | Microelectronic sensor Vacuum pressure sensor Silicon-tip Vacuum micro-chamber |
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