Stress evaluation of Through-Silicon Vias using micro-infrared photoelasticity and finite element analysis |
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| Affiliation: | 1. Department of Electro-optical Engineering, National Taipei University of Technology, Taiwan;2. Department of Mechanical Engineering, National Taiwan University, Taiwan;3. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Taiwan;1. Department of Physics and Energy Harvest–Storage Research Center, University of Ulsan, Ulsan 680-749, South Korea;2. Semiconductor Applications, Ulsan College, Ulsan 680-749, South Korea;1. School of Physics, Shandong University, Jinan 250100, China;2. School of Environmental Science and Engineering, Shandong University, Jinan 250100, China;1. Obstetrics and Gynaecology, University College Dublin, National Maternity Hospital, Dublin, Ireland;2. The Ritchie Centre, Hudson Institute of Medical Research, Department of Obstetrics and Gynaecology, Monash University, Victoria, Australia;1. Department of Mining Engineering, Indian Institute of Technology, Kharagpur 721 302, India;2. Advanced Technology Development Center, Indian Institute of Technology, Kharagpur 721 302, India |
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| Abstract: | The Through-SiliconVias (TSV) is a key component of three dimensional electronic packaging. Obtaining its stresses is very important for evaluating its reliability. A micro-infrared photoelasticity system with a thermal loading function was built and applied to characterize the stresses of the TSV structure. Through testing it was found that the stress of each TSV is different even if their fabrication technology is exactly the same, that different TSVs obtain their stress free states at different elevated temperatures, and that their stress free states are maintained even when the temperature is further elevated. A finite element model was used to quantitatively determine the stresses of a TSV under different stress-free temperatures. Different virtual photoelasticity fringe patterns were then created based on the principle of photoelasticity and the simulated stresses. Comparing the virtual fringe patterns with the experimental pattern, an appropriate virtual photoelasticity fringe pattern and the corresponding stresses of TSV were determined |
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| Keywords: | Through-silicon vias (TSV) Stress Infrared photoelasticity Finite element analysis Hybrid method |
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