| 量子效应对MOSFETs阈值电压和栅电容的影响 |
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| 引用本文： | 代月花,陈军宁,柯导明,孙家讹.量子效应对MOSFETs阈值电压和栅电容的影响[J].安徽大学学报(自然科学版),2004,28(6):42-47. |
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| 作者姓名： | 代月花 陈军宁 柯导明 孙家讹 |
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| 作者单位： | 安徽大学,电子科学与技术学院,安徽,合肥,230039 |
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| 基金项目： | 国家自然科学基金，安徽省自然科学基金 |
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| 摘 要： | 根据改进后的三角势阱场近似,并考虑量子化效应,提出了一种基于物理的阈值电压和栅电容的解析模型,给出了MOSFETs的阈值电压和栅电容的解析表达式,并与经典理论结果进行了比较。
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| 关 键 词： | 量子效应 阈值电压 栅电容 反型层 表面势 |
| 文章编号： | 1000-2162(2004)06-0042-06 |
The influence on threshold voltage and gate capacitance of MOSFETs due to quantum effects |
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| DAI Yue-hua,CHEN Jun-ning,KE Dao-ming,SUN Jia-e.The influence on threshold voltage and gate capacitance of MOSFETs due to quantum effects[J].Journal of Anhui University(Natural Sciences),2004,28(6):42-47. |
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| Authors: | DAI Yue-hua CHEN Jun-ning KE Dao-ming SUN Jia-e |
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| Abstract: | Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage and gate capacitance is presented, as well as its analytical formulation. The new model accounts for quantum effects for future generation MOS devices and integration circuits. The calculated results of the new model agree with the simulation results very well. |
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| Keywords: | quantum effects threshold voltage gate capacitance inversion layer surface potential |
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