| 空间限制与应变对发光多孔硅喇曼光谱的影响 |
| |
| 引用本文： | 杨敏,黄大鸣,郝平海,张甫龙,侯晓远,王迅. 空间限制与应变对发光多孔硅喇曼光谱的影响[J]. 物理学报, 1994, 43(3): 494-498 |
| |
| 作者姓名： | 杨敏 黄大鸣 郝平海 张甫龙 侯晓远 王迅 |
| |
| 作者单位： | 复旦大学应用表面物理国家重点实验室 |
| |
| 摘 要： | 发光多孔硅的喇曼光谱在５２０ｃｍ－１附近呈现一锐峰，峰位的红移随多孔度的增大而增大采用微晶模型拟合喇曼谱的线形，发现除了光学声子的空间限制效应，硅单晶的应变对峰位的移动也有显著贡献。通过谱形的拟合估算了硅微粒的应变，与已报道的Ｘ射线衍射结果相一致。在多孔硅的喇曼光诸中没有观察到起源于非晶硅的光散射信号。关键词：
|
| 关 键 词： | 多孔硅 发光 散射谱 应变 空间限制 |
| 收稿时间： | 1993-03-30 |
EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRA FROM LIGHT-EMITTING POROUS SILICON |
| |
| YANG MIN,HUANG DA-MING,HAO PING-HAI,ZHANG FU-LONG,HOU XIAO-YUAN and WANG XUN. EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRA FROM LIGHT-EMITTING POROUS SILICON[J]. Acta Physica Sinica, 1994, 43(3): 494-498 |
| |
| Authors: | YANG MIN HUANG DA-MING HAO PING-HAI ZHANG FU-LONG HOU XIAO-YUAN WANG XUN |
| |
| Abstract: | The typical Raman spectrum from light-emitting porous silicon shows a sharp peak near 520cm－１. The peak wavenumber decreases with the increase of porosity. The lineshape analysis shows that both phonon confinment and strain effects in nanocrystal silicon must be taken into account for the measured Raman spectra. The strain in porous silicon film is estimated and the result is consistent with that given by X-ray diffraction studies. No light scattering from amorphous phase is observed. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
