Optimization of F-doped SnO2 electrodes for organic photovoltaic devices |
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Authors: | H Kim G P Kushto R C Y Auyeung A Piqué |
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Institution: | (1) Naval Research Laboratory, 4555 Overlook Ave, SW, Washington, DC 20375, USA;(2) Nova Research Inc., Alexandria, VA, USA |
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Abstract: | Fluorine-doped tin oxide (FTO) thin films have been investigated as an alternative to indium tin oxide anodes in organic photovoltaic
devices. The structural, electrical, and optical properties of the FTO films grown by pulsed laser deposition were studied
as a function of oxygen deposition pressure. For 400 nm thick FTO films deposited at 300°C and 6.7 Pa of oxygen, an electrical
resistivity of 5×10−4 Ω-cm, sheet resistance of 12.5 Ω/□, average transmittance of 87% in the visible range, and optical band gap of 4.25 eV were obtained. Organic photovoltaic (OPV)
cells based on poly(3-hexylthiophene)/6,6]-phenyl-C61-butyric acid methyl ester bulk heterojunctions were prepared on FTO/glass electrodes and the device performance was investigated as a function of FTO
film thickness. OPV cells fabricated on the optimum FTO anodes (∼300–600 nm thick) exhibited power conversion efficiencies
of ∼3%, which is comparable to the same device made on commercial ITO/glass electrodes (3.4%). |
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Keywords: | PACS" target="_blank">PACS 72 80 Jc 73 40 -C 73 50 Pz 78 20 -e |
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