Raman analysis of oxide cladded silicon core nanowires grown with solid silicon feed stock |
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Authors: | Parul Sharma Vlad Stolojan S R P Silva |
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Institution: | (1) Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK; |
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Abstract: | Solid–liquid–solid (SLS) combined with Vapor-liquid–solid (VLS) growth mechanism has been used for synthesizing Core-clad
silicon nanowires (SiNWs) by thermal annealing onto two different catalyst substrates (Au/Si and Ni/Ti/Si). It provides a
novel method to synthesize SiNWs which is cost-effective, large-area-compatible and may give a higher degree of control of
the end product, facilitated by the simple experimental process for further device applications. The first-order Raman peaks
of the SiNWs were found to shift and to broaden asymmetrically in comparison to the c-Si Raman peak. Using a phonon confinement
model, the average diameter of the wires can be estimated from the Raman spectra but are consistently lower than the diameters
measured using high-resolution transmission electron microscopy. We interpret this as due to the confining contribution of
the oxide clad. Due to the simplicity of the method, it could be adapted in industry for large scale synthesis of SiNWs with
oxide clad for device fabrication, e.g., surround-gate field effect transistors. |
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