| 硅基VO2纳米薄膜光致绝缘体—金属相变的THz时域频谱研究 |
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| 引用本文： | 王昌雷,田震,邢岐荣,谷建强,刘丰,胡明列,柴路,王清月.硅基VO2纳米薄膜光致绝缘体—金属相变的THz时域频谱研究[J].物理学报,2010,59(11):7857-7862. |
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| 作者姓名： | 王昌雷 田震 邢岐荣 谷建强 刘丰 胡明列 柴路 王清月 |
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| 作者单位： | (1)天津大学精密仪器与光电子工程学院,超快激光研究室,天津 300072; (2)天津大学精密仪器与光电子工程学院,超快激光研究室,天津 300072;天津大学精密仪器与光电子工程学院,THz中心,天津 300072 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2007CB310408), 天津市科技支撑项目专项基金(批准号:8ZCKFZC28000), 高等学校博士学科点专项科研基金(批准号:200800560026), 天津大学"985"工程和应用基础及前沿技术研究计划(批准号:08JCZDJC17500)资助的课题. |
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| 摘 要： | 利用THz时域频谱技术(THz-TDS)研究了硅基二氧化钒(VO2)纳米薄膜的光致绝缘体—金属相变特性.在连续光激发下前后,观察到了非常明显的THz透过率变化,并通过薄膜近似计算出了THz波段金属态VO2薄膜的电导率.根据实验结果建立了金属态VO2薄膜的等效Drude模型,得到了复电导率,复电容率以及复折射率等相关的基本参数,并通过基于时域有限积分法模拟了THz波穿透硅基金属态VO2薄膜的过程,验证了所建立的模型的正确
关键词：
二氧化钒
光致相变
Drude模型
THz时域频谱技术
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| 关 键 词： | 二氧化钒 光致相变 Drude模型 THz时域频谱技术 |
| 收稿时间： | 1/7/2010 12:00:00 AM |
Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy |
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| Wang Chang-Lei,Tian Zhen,Xing Qi-Rong,Gu Jian-Qiang,Liu Feng,Hu Ming-Lie,Chai Lu,Wang Qing-Yue.Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy[J].Acta Physica Sinica,2010,59(11):7857-7862. |
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| Authors: | Wang Chang-Lei Tian Zhen Xing Qi-Rong Gu Jian-Qiang Liu Feng Hu Ming-Lie Chai Lu Wang Qing-Yue |
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| Institution: | Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China;Ultrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | The photo-induced insulator-metal transition for silicon-based VO2 nanofilm is studied by THz time-domain spectroscopy (THz-TDS). Obvious variations of THz ray transmittance are observed before and after the CW laser beam exciting, and the conductivity of metallic-phased VO2 film in the THz region is calculated in the thin film approximation. According to the measured results, the metallic-phased VO2 film is characterized equivalently with Drude’s model, and complex conductivity, dielectric function and refractive index are acquired by the model. As an examination on the equivalent Drude model, numerical simulation based on the finite integral method in time domain is carried out. The results show that they are in good agreement with the experimental results. This work provides a reference for the study on phase transition of VO2 nanofilm and its application in the THz region. |
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| Keywords: | Vandium dioxide photo-induced phase transition Drude model THz-TDS |
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