A Locally Adaptive Multimode Photodetector Circuit

Photodetection circuits form the first stage of the artificial image acquisition process. The image acquisition circuits discussed in this paper pertain to circuits fabricated in a standard CMOS process. Such circuits offers advantages such as random access to a pixel, faster readout, integration of processing circuitry on the same die, low voltage and low power dissipation, and lower cost over the conventional Charge Coupled Device (CCD) process. We describe a new locally adaptive multimode photodetector circuit. The advantages of the circuit are local adaptation, wide dynamic range, excellent sensitivity, and large output voltage swing. The circuit was fabricated in the 2 CMOS process through MOSIS. Simulation and experimental results of the circuit are given.