首页 | 本学科首页   官方微博 | 高级检索  
     

Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates
引用本文:杨大鹏 苏作鹏 杜勇慧 吉晓瑞 杨旭昕 宫希亮 张铁臣. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. 中国物理快报, 2006, 23(5): 1324-1326
作者姓名:杨大鹏 苏作鹏 杜勇慧 吉晓瑞 杨旭昕 宫希亮 张铁臣
作者单位:National Laboratory of Superhard Materials, dilin University, Changchun 130023
摘    要:Cubic boron nitride (c-BN) films were deposited on highly-oriented (111) bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy (μ-RS) and scanning electron microscopy (SEM), The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained, Island and step growth models are clearly shown.

关 键 词:生长特性 立方硼氮化物 晶体结构 生长薄膜
收稿时间:2005-12-30
修稿时间:2005-12-30

Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates
YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. Chinese Physics Letters, 2006, 23(5): 1324-1326
Authors:YANG Da-Peng   SU Zuo-Peng   DU Yong-Hui   JI Xiao-Rui   YANG Xu-Xin   GONG Xi-Liang   ZHANG Tie-Chen
Affiliation:National Laboratory of Superhard Materials, Jilin University, Changchun 130023
Abstract:
Keywords:
本文献已被 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号