室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

用磁控溅射淀积掺Er氧化硅、掺Er富硅氧化硅、掺Er氮化硅和掺Er富硅氮化硅薄膜，室温下测量这四种薄膜的光致发光（PL）谱，观察到这四种薄膜都具有1.54μm的峰位，其强度与薄膜的退火温度有关。为了确定1.54μmPL的最佳退火温度，这些薄膜都分别在600，700，800，900，1000，1100℃的温度下同时退火，发现两种富硅薄膜的最佳退火温度是800℃，不富硅的两种薄膜的最佳退火温度是900℃。样品的1.54μmPL最强，且800℃退火的掺Er富硅氧化硅薄膜的1.54μm峰强度是最强的，比不富硅的强了约20倍，还观察到这四种薄膜都具有1.38μm的PL带，且掺Er富硅氧化硅和掺Er富硅氮化硅这两种薄膜的PL在强度上1.38μm峰与1.54μm峰有一定的关系。

Photoluminescence from Er-doped Silicon-rich Silicon Oxide Film and Er-doped Silicon-rich Silicon Nitride Film and Its Annealing Behavior

Room temperature photoluminescence (PL) with a peak at 1.54 microns was observed from silicon oxide, silicon-rich silicon oxide, silicon nitride and silicon-rich silicon nitride films, all doped with Er and grown by the magnetron sputtering technique. To determine the optimum annealing temperature for the 1.54 microns PL, these films were annealed in the range of 600-1,100 degrees C with an interval of 100 degrees C. Among these four types of films annealed at an identical temperature, the intensity of 1.54 microns PL peak of the Er-doped silicon-rich silicon oxide film was always the strongest one, which arrived at a maximum in 800 degrees C annealing. A 1.38 microns PL band was also observed in each of these four types of films, and which in the silicon-rich silicon oxide or silicon-rich silicon nitride films was found to be correlated with the 1.54 microns PL band in intensity.