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PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING
Authors:Liu Ji-wen  Xie Fang-qing  Zhong Ding-yong  Wang En-ge  Liu Wen-xi  Li Shun-feng and Yang Hui
Institution:State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.
Keywords:luminescence  SiC  nanocrystalline film  rf sputtering
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